Mobility in graphene double gate field effect transistors
نویسندگان
چکیده
منابع مشابه
Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors
We study the bias-temperature instability (BTI) on the back gate of double-gated graphene field-effect transistors (GFETs). The dependence of the resulting degradation on the stress time and oxide field is analyzed. Finally, the results are compared to the ones obtained on the high-k top gate of the same device.
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2008
ISSN: 0038-1101
DOI: 10.1016/j.sse.2007.10.054